First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects. - Haoran Lu; Yandong Ge; Xun Jiang 002; Jiacheng Sun; Wanyue Peng; Rui Guo; Ming Li; Yibo Lin; Runsheng Wang; Heng Wu; Ru Huang 001 (VLSI Technology and Circuits, 2024)

A Tale of Two Sides of Wafer: Physical Implementation and Block-Level PPA on Flip FET with Dual-sided Signals. - Haoran Lu; Xun Jiang 002; Yanbang Chu; Ziqiao Xu; Rui Guo; Wanyue Peng; Yibo Lin; Runsheng Wang; Heng Wu; Ru Huang 001 (CoRR, 2025)