Wangran Wu

According to our database, Wangran Wu authored at least 2 papers between 2015 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs.

Wangran Wu, J. Lu, Chang Liu, Heng Wu, Xiaoyu Tang, Jiabao Sun, Rui Zhang, Wenjie Yu, Xi Wang, Yi Zhao

Microelectron. Reliab., 2016

2015

PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding.

Xiaoyu Tang, J. Lu, Rui Zhang, Yi Zhao, Wangran Wu, Chang Liu, Yi Shi, Ziqian Huang, Yuechan Kong

Proceedings of the IEEE International Reliability Physics Symposium, 2015