Wan-Hsuan Hsieh
According to our database1,
Wan-Hsuan Hsieh
authored at least 5 papers
between 2022 and 2024.
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Bibliography
2024
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm<sup>2</sup> with Endurance > 4E12.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022