Vamsi Putcha

According to our database, Vamsi Putcha authored at least 8 papers between 2015 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications.

Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.

Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer.

AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices.

Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications.

Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser

Microelectron. Reliab., 2018

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps.

Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Origins and implications of increased channel hot carrier variability in nFinFETs.

Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean

Proceedings of the IEEE International Reliability Physics Symposium, 2015