Valeria Kilchytska

According to our database, Valeria Kilchytska authored at least 12 papers between 2007 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures.

Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017

Back-gate bias effect on UTBB-FDSOI non-linearity performance.

B. Kazemi Esfeh, Valeria Kilchytska, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications.

K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity, Denis Flandre, Valeria Kilchytska

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2014

Variability of UTBB MOSFET analog figures of merit in wide frequency range.

Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, Vincent Barral, Nicolas Planes, Michel Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference.

El Hafed Boufouss, Laurent A. Francis, Valeria Kilchytska, Pierre Gérard, Pascal Simon, Denis Flandre

Sensors, 2013

Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets.

Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre, Valeria Kilchytska, François Andrieu

Proceedings of the European Solid-State Device Research Conference, 2013

2012

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.

Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre

Microelectron. Reliab., 2012

On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime.

Valeria Kilchytska, Denis Flandre, François Andrieu

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer.

C. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, Dimitri Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin

Microelectron. Reliab., 2011

Characterization and modelling of single event transients in LDMOS-SOI FETs.

Joaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre

Microelectron. Reliab., 2011

2010

Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs.

Joaquín Alvarado, El Hafed Boufouss, Valeria Kilchytska, Denis Flandre

Microelectron. Reliab., 2010

2007

Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs.

Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre

Microelectron. J., 2007