Vaibhav Verma

Orcid: 0000-0002-1646-3216

According to our database1, Vaibhav Verma authored at least 12 papers between 2014 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2023
LiteAIR5: A System-Level Framework for the Design and Modeling of AI-extended RISC-V Cores.
Proceedings of the 36th IEEE International System-on-Chip Conference, 2023

Design Space Exploration of Layer-Wise Mixed-Precision Quantization with Tightly Integrated Edge Inference Units.
Proceedings of the Great Lakes Symposium on VLSI 2023, 2023

2022
EXTREM-EDGE - EXtensions To RISC-V for Energy-efficient ML inference at the EDGE of IoT.
Sustain. Comput. Informatics Syst., 2022

2021
ATCPiM: Analog to Time Coded Processing in Memory for IoT at the Edge.
Proceedings of the 7th IEEE World Forum on Internet of Things, 2021

2020
Comparative Analysis and Implementation of Single-ended Sense Amplifier Schemes using 65nm LSTP CMOS Technology.
Proceedings of the 2020 24th International Symposium on VLSI Design and Test (VDAT), 2020

2019
A Scalable and Efficient In-Memory Interconnect Architecture for Automata Processing.
IEEE Comput. Archit. Lett., 2019

eAP: A Scalable and Efficient In-Memory Accelerator for Automata Processing.
Proceedings of the 52nd Annual IEEE/ACM International Symposium on Microarchitecture, 2019

2018
When "things" get older: Exploring circuit aging in IoT applications.
Proceedings of the 19th International Symposium on Quality Electronic Design, 2018

SRAM based opportunistic energy efficiency improvement in dual-supply near-threshold processors.
Proceedings of the 55th Annual Design Automation Conference, 2018

2017
Back to the Future: Digital Circuit Design in the FinFET Era.
J. Low Power Electron., 2017

2015
A 128-kb 10% power reduced 1T high density ROM with 0.56 ns access time using bitline edge sensing in sub 16nm bulk FinFET technology.
Proceedings of the 28th IEEE International System-on-Chip Conference, 2015

2014
A 500 mV to 1.0 V 128 Kb SRAM in Sub 20 nm Bulk-FinFET Using Auto-adjustable Write Assist.
Proceedings of the 2014 27th International Conference on VLSI Design, 2014


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