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V. Záhlava

According to our database1, V. Záhlava authored at least 4 papers between 2003 and 2017.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2017
Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment.
[BibTeX]
[DOI]
Stanislav Popelka
,
Pavel Hazdra
,
V. Záhlava
Microelectron. Reliab., 2017

2011
Molybdenum and low-temperature annealing of a silicon power P-i-N diode.
[BibTeX]
[DOI]
J. Vobecký
,
V. Komarnitskyy
,
V. Záhlava
Microelectron. Reliab., 2011

2010
Doping compensation for increased robustness of fast recovery silicon diodes.
[BibTeX]
[DOI]
J. Vobecký
,
V. Záhlava
,
V. Komarnitskyy
Microelectron. Reliab., 2010

2003
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode.
[BibTeX]
[DOI]
J. Vobecký
,
Pavel Hazdra
,
V. Záhlava
Microelectron. Reliab., 2003


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