V. S. Pershenkov

According to our database, V. S. Pershenkov authored at least 6 papers between 2001 and 2017.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2017

True dose rate physical mechanism of ELDRS effect in bipolar devices.

V. S. Pershenkov, Aleksandr S. Petrov, Alexander S. Bakerenkov, Viktor N. Ulimov, V. A. Felytsyn, A. S. Rodin, V. V. Belyakov, V. A. Telets, V. V. Shurenkov

Microelectron. Reliab., 2017

2016

ELDRS in SiGe transistors for room and low-temperature irradiation.

V. S. Pershenkov, Alexander S. Bakerenkov, V. A. Felitsyn, A. S. Rodin, V. A. Telets, V. V. Belyakov

Microelectron. Reliab., 2016

2014

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses.

V. S. Pershenkov, Miguel Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez

Microelectron. Reliab., 2014

2006

X-ray ion mobility spectrometer.

V. S. Pershenkov, A. D. Tremasov, V. V. Belyakov, A. U. Razvalyaev, V. S. Mochkin

Microelectron. Reliab., 2006

2002

Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response.

V. S. Pershenkov, S. V. Avdeev, A. S. Tsimbalov, M. N. Levin, V. V. Belyakov, D. V. Ivashin, A. Y. Slesarev, A. Y. Bashin, Gennady I. Zebrev, Viktor N. Ulimov

Microelectron. Reliab., 2002

2001

X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages.

M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov, V. S. Pershenkov

Microelectron. Reliab., 2001