V. I. Turchanikov

According to our database, V. I. Turchanikov authored at least 2 papers between 2005 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2007

Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation.

V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, V. Ostahov, O. Winkler, B. Spangenberg, H. Kurz

Microelectron. Reliab., 2007

2005

Charge storage peculiarities in poly-Si-SiO₂-Si memory devices with Si nanocrystals rich SiO₂.

V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido

Microelectron. Reliab., 2005