V. Ho

According to our database, V. Ho authored at least 4 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

402 Tb/s GMI data-rate OESCLU-band Transmission.

Benjamin J. Puttnam, Ruben S. Luis, Ian D. Phillips, Mingming Tan, Aleksandr Donodin, Dini Pratiwi, Lauren Dallachiesa, Y. Huang, Mikael Mazur, Nicolas K. Fontaine, H. Chen, Dicky Chung, V. Ho, Daniele Orsuti, Budsara Boriboon, Georg Rademacher, Luca Palmieri, Ray Man, Roland Ryf, David T. Neilson, Wladek Forysiak, Hideaki Furukawa

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024

2009

Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.

W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan

Microelectron. Reliab., 2009

2008

An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory.

W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan

Microelectron. Reliab., 2008

A study of the linearity between I_on and log I_off of modern MOS transistors and its application to stress engineering.

W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan

Microelectron. Reliab., 2008