Uthayasankaran Peralagu

According to our database, Uthayasankaran Peralagu authored at least 6 papers between 2020 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.

Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs.

Rana Y. El Kashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications.

Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer.

AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities.

Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert

Proceedings of the International Conference on IC Design and Technology, 2021

2020

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications.

Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020