Uppili S. Raghunathan

According to our database1, Uppili S. Raghunathan authored at least 12 papers between 2018 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2023
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018


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