Umesh K. Mishra

According to our database, Umesh K. Mishra authored at least 20 papers between 1992 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.

Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth.

Boyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra

Proceedings of the Device Research Conference, 2024

2023

Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply.

Umesh K. Mishra

Proc. IEEE, April, 2023

Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz.

Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra

Proceedings of the Device Research Conference, 2023

2022

Short-Circuit Capability with GaN HEMTs : Invited.

Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT.

Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra

Proceedings of the 2020 Device Research Conference, 2020

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage.

Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra

Proceedings of the 2020 Device Research Conference, 2020

2019

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction.

Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra

Proceedings of the Device Research Conference, 2019

Virtual-Source Modeling of N-polar GaN MISHEMTS.

Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2015

Commercialization and reliability of 600 V GaN power switches.

Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, YiFeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Peter Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh Lal, Umesh K. Mishra, Primit Parikh

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2011

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH₃-rich conditions.

Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides

Microelectron. Reliab., 2011

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes.

Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra

Microelectron. Reliab., 2011

2008

GaN-Based RF Power Devices and Amplifiers.

Umesh K. Mishra, Likun Shen, Thomas E. Kazior, YiFeng Wu

Proc. IEEE, 2008

2006

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy.

Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck

IEICE Trans. Electron., 2006

2002

AlGaN/GaN HEMTs-an overview of device operation and applications.

Umesh K. Mishra, Primit Parikh, YiFeng Wu

Proc. IEEE, 2002

2000

Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers.

Karthikeyan Krishnamurthy, Ramakrishna Vetury, Stacia Keller, Umesh K. Mishra, Mark J. W. Rodwell, Stephen I. Long

IEEE J. Solid State Circuits, 2000

1999

Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology.

Thomas J. Jenkins, Lois T. Kehias, Primit Parikh, James Ibbetson, Umesh K. Mishra, Daniel Docter, Minh Le, Joe Pusl, Duncan Widman

IEEE J. Solid State Circuits, 1999

1992

Ultra-high speed modulation-doped field-effect transistors: a tutorial review.

Loi D. Nguyen, Lawrence E. Larson, Umesh K. Mishra

Proc. IEEE, 1992