Umberto Celano

According to our database, Umberto Celano authored at least 7 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

How Lithography and Metrology Are Enabling Yield in the Next Generation of Semiconductor Patterning.

Mark O. Neisser, Ndubuisi G. Orji, Harry J. Levinson, Umberto Celano, James R. Moyne, Supika Mashiro, Dan Wilcox, Slava Libman

Computer, January, 2024

2022

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, Shreya Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

A comprehensive variability study of doped HfO2 FeFET for memory applications.

Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2022

2019

New Insights into the Imprint Effect in FE-HfO2 and its Recovery.

Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies.

Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament.

Attilio Belmonte, Ludovic Goux, Jiyong Woo, Umberto Celano, Augusto Redolfi, Sergiu Clima, Gouri Sankar Kar

Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

2015

Conductive filaments multiplicity as a variability factor in CBRAM.

Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst

Proceedings of the IEEE International Reliability Physics Symposium, 2015