Tzung-Bin Huang

According to our database, Tzung-Bin Huang authored at least 2 papers between 2006 and 2017.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2017

A new erase method for scaled NAND flash memory device.

Chan-Ching Lin, Kuei-Shu Chang-Liao, Tzung-Bin Huang, Cheng-Jung Yu, Hsueh-Chao Ko

Microelectron. Reliab., 2017

2006

Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory.

Victor Chao-Wei Kuo, Chih-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Saysamone Pittikoun

Proceedings of the 14th IEEE International Workshop on Memory Technology, 2006