Tsuyoshi Funaki

Orcid: 0000-0001-8776-5118

According to our database1, Tsuyoshi Funaki authored at least 42 papers between 2004 and 2024.

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Bibliography

2024
Evaluation of Phase Measurement Error in Digital Oscilloscopes.
Proceedings of the IEEE International Instrumentation and Measurement Technology Conference, 2024

2022
Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver.
IEICE Trans. Electron., December, 2022

Transient thermal characterization of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes.
IEICE Electron. Express, 2022

2020
A Modular Approach to Large-Signal Modeling of an Interconnected AC/MTDC System.
Proceedings of the IEEE PES Innovative Smart Grid Technologies Europe, 2020

EMI characterization for power conversion circuit with SiC power devices.
Proceedings of the 29th IEEE Asian Test Symposium, 2020

2019
Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models.
IEICE Trans. Commun., 2019

An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD.
IEICE Electron. Express, 2019

Analysis on Temperature Dependency of Effective AC Conductor Resistance of Underground Cables for Dynamic Line Ratings in Smart Grids.
Proceedings of the 21st IEEE International Conference on High Performance Computing and Communications; 17th IEEE International Conference on Smart City; 5th IEEE International Conference on Data Science and Systems, 2019

2018
Visualization of noise current propagation in a power module with scanning time-synchronized near magnetic field measurement.
IEICE Electron. Express, 2018

An experimental study on estimating dynamic junction temperature of SiC MOSFET.
IEICE Electron. Express, 2018

2017
Open-circuit-voltage characterization system design for studies of phase-transition mechanism and deterioration in Mn-type Li-ion batteries.
IEICE Electron. Express, 2017

Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor.
IEICE Electron. Express, 2017

Methodology for the determination of real-time dynamic line ratings for secure operation of overhead conductors.
Proceedings of the 2017 IEEE PES Innovative Smart Grid Technologies Conference Europe, 2017

2016
Transient thermal analysis of packaged SiC SBDs for high temperature operation.
IEICE Electron. Express, 2016

2015
Conducted noise of GaN Schottky barrier diode in a DC-DC converter.
IEICE Electron. Express, 2015

2014
Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode.
IEICE Electron. Express, 2014

A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes.
IEICE Electron. Express, 2014

2013
Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer.
IEICE Electron. Express, 2013

Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs.
IEICE Electron. Express, 2013

A method for evaluating installable capacity of distributed generators with power factor control in MV and LV distribution networks.
Proceedings of the 4th IEEE PES Innovative Smart Grid Technologies Europe, 2013

A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit.
Proceedings of the 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits, 2013

2012
Thermal instability effects in SiC Power MOSFETs.
Microelectron. Reliab., 2012

High temperature switching operation of a power diamond Schottky barrier diode.
IEICE Electron. Express, 2012

2011
A study of SiC Power BJT performance and robustness.
Microelectron. Reliab., 2011

A study on modeling of dynamic characteristics of circuit component in TDR measurement based on Prony analysis.
IEICE Electron. Express, 2011

Comparative study of the static and switching characteristics of SiC and Si MOSFETs.
IEICE Electron. Express, 2011

2010
Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances.
IEICE Electron. Express, 2010

Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET.
IEICE Electron. Express, 2010

Experimental validation of an equivalent mechanical model for understanding power system stability.
IEICE Electron. Express, 2010

Switching characteristics of a diamond Schottky barrier diode.
IEICE Electron. Express, 2010

Characterization of SiC power module for high switching frequency operation.
IEICE Electron. Express, 2010

2009
The influence of parasitic components on power MOSFET switching operation in power conversion circuits.
IEICE Electron. Express, 2009

2008
The Origin of Nonlinear Phenomena in TCR-SVC Associated With Parametric Excitation of Intrinsic Oscillation and External Excitation.
IEEE Trans. Circuits Syst. I Regul. Pap., 2008

A study on electro thermal response of SiC power module during high temperature operation.
IEICE Electron. Express, 2008

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena.
IEICE Electron. Express, 2008

2007
Enhanced Entrainment of Synchronous Inverters for Distributed Power Sources.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007

Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET.
IEICE Electron. Express, 2007

2006
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage.
IEICE Electron. Express, 2006

2005
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters.
IEICE Electron. Express, 2005

Simple circuit model of SiC pin diode composed by using experimental electrical characteristics.
IEICE Electron. Express, 2005

Evaluating performance of hybrid-type power system simulator based on transient stability analysis: a dynamical system approach.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005

2004
SiC JFET dc characteristics under extremely high ambient temperatures.
IEICE Electron. Express, 2004


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