Tsung-Yung Jonathan Chang
According to our database1,
Tsung-Yung Jonathan Chang
authored at least 46 papers
between 2013 and 2024.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2018, "For application of SRAM technology to low-power and high-performance computing".
Timeline
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Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2024
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., April, 2024
A 3-nm FinFET 27.6-Mbit/mm<sup>2</sup> Single-Port 6T SRAM Enabling 0.48-1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking.
IEEE J. Solid State Circuits, April, 2024
An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices.
IEEE J. Solid State Circuits, January, 2024
A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme.
IEEE J. Solid State Circuits, January, 2024
A 22nm Nonvolatile AI-Edge Processor with 21.4TFLOPS/W using 47.25Mb Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute Macro.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
A 3nm Fin-FET 19.87-Mbit/mm<sup>2</sup> 2RW Pseudo Dual-Port 6T SRAM with High-R Wire Tracking and Sequential Access Aware Dynamic Power Reduction.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
A 3.3GHz 1024X640 Multi-Bank Single-Port SRAM with Frequency Enhancing Techniques and 0.55V-1.35V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10<sup>12</sup> Write Endurance and Integrated Margin-Expansion Schemes.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm<sup>2</sup> Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm<sup>2</sup> and 3.78Mb/mm<sup>2</sup> Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices.
IEEE J. Solid State Circuits, 2023
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device.
IEEE J. Solid State Circuits, 2022
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
A 5-nm 254-TOPS/W 221-TOPS/mm<sup>2</sup> Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator.
IEEE J. Solid State Circuits, 2021
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications.
IEEE J. Solid State Circuits, 2021
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
An 89TOPS/W and 16.3TOPS/mm<sup>2</sup> All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time.
IEEE J. Solid State Circuits, 2019
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination.
IEEE J. Solid State Circuits, 2019
2018
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
Logic Process Compatible 40nm 256K×144 Embedded RRAM with Low Voltage Current Limiter and Ambient Compensation Scheme to Improve the Read Window.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2017
11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
A 1.4Mb 40-nm embedded ReRAM macro with 0.07um<sup>2</sup> bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2015
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations.
IEEE J. Solid State Circuits, 2015
2014
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013