Tsukasa Ooishi

According to our database, Tsukasa Ooishi authored at least 8 papers between 1994 and 2002.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2002

A 99-mm² 0.7-W single-chip MPEG-2 422P@ML video, audio, and system encoder with a 64-Mb embedded DRAM for portable 422P@HL encoder system.

Satoshi Kumaki, Hidehiro Takata, Yoshihide Ajioka, Tsukasa Ooishi, Kazuya Ishihara, Atsuo Hanami, Takaharu Tsuji, Tetsuya Watanabe, Chikayoshi Morishima, Tomoaki Yoshizawa, Hidenori Sato, Shin-ichi Hattori, Atsushi Koshio, Kazuhiro Tsukamoto, Tetsuya Matsumura

IEEE J. Solid State Circuits, 2002

0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability.

Hirohito Kikukawa, Shigeki Tomishima, Takaharu Tsuji, Toshiaki Kawasaki, Shouji Sakamoto, Masatoshi Ishikawa, Wataru Abe, Hiroaki Tanizaki, Hiroshi Kato, Toshitaka Uchikoba, Toshihiro Inokuchi, Manabu Senoh, Yoshifumi Fukushima, Mitsutaka Niiro, Masanao Maruta, Akinori Shibayama, Tsukasa Ooishi, Kazunari Takahashi, Hideto Hidaka

IEEE J. Solid State Circuits, 2002

2001

A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications.

Shigeki Tomishima, Takaharu Tsuji, Toshiaki Kawasaki, Masatoshi Ishikawa, Toshihiro Inokuchi, Hiroshi Kato, Hiroaki Tanizaki, Wataru Abe, Akinori Shibayama, Yoshifumi Fukushima, Mitsutaka Niiro, Masanao Maruta, Toshitaka Uchikoba, Manabu Senoh, Shouji Sakamoto, Tsukasa Ooishi, Hirohito Kikukawa, Hideto Hidaka, Kazunari Takahashi

IEEE J. Solid State Circuits, 2001

A 99-mm², 0.7-W, single-chip MPEG-2 422P@ML video, audio, and system encoder with a 64-Mbit embedded DRAM for portable 422P@HL encoder system.

Satoshi Kumaki, Hidehiro Takata, Yoshihide Ajioka, Tsukasa Ooishi, Kazuya Ishihara, Atsuo Hanami, Takaharu Tsuji, Yusuke Kanehira, Tetsuya Watanabe, Chikayoshi Morishima, Tomoaki Yoshizawa, Hidenori Sato, Shin-ichi Hattori, Atsushi Koshio, Kazuhiro Tsukamoto, Tetsuva Matsumura

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

1996

A mixed-mode voltage down converter with impedance adjustment circuitry for low-voltage high-frequency memories.

Tsukasa Ooishi, Yuichiro Komiya, Kei Hamade, Mikio Asakura, Kenichi Yasuda, Kiyohiro Furutani, Tetsuo Kato, Hideto Hidaka, Hideyuki Ozaki

IEEE J. Solid State Circuits, 1996

1995

An automatic temperature compensation of internal sense ground for subquarter micron DRAM's.

Tsukasa Ooishi, Yuichiro Komiya, Kei Hamade, Mho Asakura, Kenichi Yasuda, Kiyohiro Furutani, Hideto Hidaka, Hiroshi Miyamoto, Hideyuki Ozaki

IEEE J. Solid State Circuits, April, 1995

1994

An experimental 256-Mb DRAM with boosted sense-ground scheme.

Mikio Asakura, Tsukasa Ooishi, Masaki Tsukude, Shigeki Tomishima, Takahisa Eimori, Hideto Hidaka, Yoshikazu Ohno, Kazutani Arimoto, Kazuyasu Fujishima, Tadashi Nishimura, Tsutomu Yoshihara

IEEE J. Solid State Circuits, November, 1994

A well-synchronized sensing/equalizing method for sub-1.0-V operating advanced DRAMs.

Tsukasa Ooishi, Mikio Asakura, Shigeki Tomishima, Hideto Hidaka, Kazutami Arimoto, Kazuyasu Fujishima

IEEE J. Solid State Circuits, April, 1994