Toshiyuki Oishi

According to our database, Toshiyuki Oishi authored at least 3 papers between 2014 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation.

Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Toshiyuki Oishi

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement.

Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2014

Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation.

Hajime Sasaki, Kaoru Kadoiwa, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto, Toshiyuki Oishi, Kazuo Hayashi

Microelectron. Reliab., 2014