Toshiyuki Naka

According to our database, Toshiyuki Naka authored at least 4 papers between 2015 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs.

Wataru Saito, Toshiyuki Naka

Microelectron. Reliab., 2017

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications.

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch

IEICE Trans. Electron., 2017

2016

UIS test of high-voltage GaN-HEMTs with p-type gate structure.

Wataru Saito, Toshiyuki Naka

Microelectron. Reliab., 2016

2015

Breakdown behaviour of high-voltage GaN-HEMTs.

Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi

Microelectron. Reliab., 2015