Toshihiko Yoshimasu
Orcid: 0000-0001-5588-8973
According to our database1,
Toshihiko Yoshimasu
authored at least 21 papers
between 1998 and 2024.
Collaborative distances:
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Bibliography
2024
A 14-GHz-Band Low-Supply-Voltage Low-Phase-Noise LC-VCO IC with Harmonic Tuned LC Tank in 45-nm CMOS SOI.
Proceedings of the 21st International SoC Design Conference, 2024
A 38-GHz Stacked-FET Linear Power Amplifier with Novel Phase Linearizer Circuit in 45-nm CMOS SOI.
Proceedings of the 21st International SoC Design Conference, 2024
2023
Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS.
IEICE Trans. Electron., July, 2023
2022
An Ultra-Low-Power Octave-Tuning VCO IC With a Single Analog Voltage-Controlled Novel Varactor.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
2021
A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2021
2020
0.3 V 15-GHz Band VCO ICs with Novel Transformer-Based Harmonic Tuned Tanks in 45-nm SOI CMOS.
IEICE Trans. Electron., 2020
A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS.
IEICE Trans. Electron., 2020
2019
Ultra-Low Voltage 15-GHz Band Best FoM <-190 dBc/Hz LC-VCO ICs with Novel Harmonic Tuned LC Tank in 45-nm SOI CMOS.
IEICE Trans. Electron., 2019
High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications.
IEICE Trans. Electron., 2019
A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS.
Proceedings of the IEEE Radio and Wireless Symposium, 2019
2015
A 5-GHz Band WLAN SiGe HBT Power Amplifier IC with Novel Adaptive-Linearizing CMOS Bias Circuit.
IEICE Trans. Electron., 2015
2014
A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014
23Gbps 9.4pJ/bit 80/100GHz band CMOS transceiver with on-board antenna for short-range communication.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2014
2012
A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012
2011
IEICE Trans. Electron., 2011
A Broadband High Suppression Frequency Doubler IC for Sub-Millimeter-Wave UWB Applications.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2011
A 1.2-3.2 GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2011
2009
Proceedings of the IEEE 20th International Symposium on Personal, 2009
2007
IEICE Trans. Electron., 2007
2005
IEICE Trans. Electron., 2005
1998
An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications.
IEEE J. Solid State Circuits, 1998