Tony Balistreri

According to our database, Tony Balistreri authored at least 2 papers in 2009.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2009

Physical degradation of GaN HEMT devices under high drain bias reliability testing.

S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim

Microelectron. Reliab., 2009

A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology.

Charles Campbell, Cathy Lee, Victoria Williams, Ming-Yih Kao, Hua-Quen Tserng, Paul Saunier, Tony Balistreri

IEEE J. Solid State Circuits, 2009