Tommaso Stecconi

Orcid: 0000-0001-5385-3486

According to our database1, Tommaso Stecconi authored at least 6 papers between 2019 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices.
Proceedings of the Device Research Conference, 2024

2023
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM.
Proceedings of the IEEE International Memory Workshop, 2023

2022
A Trainable Sequence Learner that Learns and Recognizes Two-Input Sequence Patterns.
CoRR, 2022

Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states.
Proceedings of the Device Research Conference, 2022

2019
A Volatile RRAM Synapse for Neuromorphic Computing.
Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019


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