Tomás Palacios

According to our database, Tomás Palacios authored at least 26 papers between 2006 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C.

John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios

Proceedings of the Device Research Conference, 2024

GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C.

Shisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao

Proceedings of the Device Research Conference, 2024

A 0.7cm² 3.5GHz, -31 dBm Sensitivity Batteryless 5G Energy Harvester Backscattering Chip for Asset Identification in IoT-Enabled Warehouses.

Deniz Umut Yildirim, Jaeyoung Jung, Amr Elsakka, Giuseppe Moschetti, Miguel M. Lopez, Jonas Hansryd, Tomás Palacios, Anantha P. Chandrakasan

Proceedings of the IEEE Custom Integrated Circuits Conference, 2024

2023

Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C.

Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of GaN RF HEMTs on Engineered Substrate.

Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios

Proceedings of the Device Research Conference, 2023

2022

Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting.

Yiyue Luo, Kui Wu, Andrew Spielberg, Michael Foshey, Daniela Rus, Tomás Palacios, Wojciech Matusik

Proceedings of the CHI '22: CHI Conference on Human Factors in Computing Systems, New Orleans, LA, USA, 29 April 2022, 2022

2021

Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz.

Joshua A. Perozek, Ahmad Zubair, Tomás Palacios

Proceedings of the Device Research Conference, 2021

Performance Estimation of GaN CMOS Technology.

Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios

Proceedings of the Device Research Conference, 2021

Intelligent Carpet: Inferring 3D Human Pose From Tactile Signals.

Yiyue Luo, Yunzhu Li, Michael Foshey, Wan Shou, Pratyusha Sharma, Tomás Palacios, Antonio Torralba, Wojciech Matusik

Proceedings of the IEEE Conference on Computer Vision and Pattern Recognition, 2021

KnitUI: Fabricating Interactive and Sensing Textiles with Machine Knitting.

Yiyue Luo, Kui Wu, Tomás Palacios, Wojciech Matusik

Proceedings of the CHI '21: CHI Conference on Human Factors in Computing Systems, 2021

2020

First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate.

Ahmad Zubair, Joshua A. Perozek, John Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios

Proceedings of the 2020 Device Research Conference, 2020

Materials and Technology Issues for the Next Generation of Power Electronic Devices.

Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios

Proceedings of the 2020 Device Research Conference, 2020

GaN Nanowire Field Emitters with a Self-Aligned Gate Process.

Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios

Proceedings of the 2020 Device Research Conference, 2020

Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors.

Girish Rughoobur, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande

Proceedings of the 2020 Device Research Conference, 2020

2018

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors.

Charles Mackin, Elaine McVay, Tomás Palacios

Sensors, 2018

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.

Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

Degradation of vertical GaN FETs under gate and drain stress.

Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter.

Eyal Aklimi, Daniel Piedra, Kevin Tien, Tomás Palacios, Kenneth L. Shepard

IEEE J. Solid State Circuits, 2017

2015

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks.

M. P. King, Jeramy Ray Dickerson, S. DasGupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013

Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue].

Elias Towe, Tomás Palacios, Maki Suemitsu

Proc. IEEE, 2013

Large-Area 2-D Electronics: Materials, Technology, and Devices.

Allen Hsu, Han Wang, Yong Cheol Shin, Benjamin Mailly, Xu Zhang, Lili Yu, Yumeng Shi, Yi Hsien Lee, Madan Dubey, Ki Kang Kim, Jing Kong, Tomás Palacios

Proc. IEEE, 2013

2012

A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers.

Nick L. Marcoux, Christopher J. Fisher, Doug White, John Lachapelle, Tomás Palacios, Omair Saadat, Sameer Sonkusale

Proceedings of the 55th IEEE International Midwest Symposium on Circuits and Systems, 2012

Scaling of InAlN/GaN power transistors.

Daniel Piedra, Hyung-Seok Lee, Tomás Palacios, Xiang Gao, Shiping Guo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.

Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo

Microelectron. Reliab., 2010

Applications of graphene devices in RF communications.

Tomás Palacios, Allen Hsu, Han Wang

IEEE Commun. Mag., 2010

2006

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy.

Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck

IEICE Trans. Electron., 2006