Tom Schram

According to our database, Tom Schram authored at least 18 papers between 2005 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration.

S. Ghosh, A. Kruv, Quentin Smets, Tom Schram, D. J. Leech, T. Ding, V. Turkani, Benjamin Groven, A. Dangel, G. Probst, Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach.

Shreya Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, Stefan Decoster, P. Bezard, F. Lazzarino, K. Banerjee, Souvik Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer.

Souvik Ghosh, Quentin Smets, S. Banerjee, Tom Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.

L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails.

Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Yusuke Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs.

L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer

Proceedings of the Device Research Conference, 2022

2017

WS2 transistors on 300 mm wafers with BEOL compatibility.

Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Towards high performance sub-10nm finW bulk FinFET technology.

Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.

Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Assessment of SiGe quantum well transistors for DRAM peripheral applications.

Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration.

Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Off-state stress degradation mechanism on advanced p-MOSFETs.

Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Impact of Off State Stress on advanced high-K metal gate NMOSFETs.

Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.

Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2007

Mechanism of O₂-anneal induced V_fb shifts of Ru gated stacks.

Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer

Microelectron. Reliab., 2007

2005

Performance improvement of self-aligned HfO₂/TaN and SiON/TaN nMOS transistors.

Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen

Microelectron. Reliab., 2005

Potential remedies for the V_T/V_fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey.

W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes

Microelectron. Reliab., 2005