Tillmann Krauss

According to our database, Tillmann Krauss authored at least 12 papers between 2012 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

From MOSFETs to Ambipolar Transistors: Standard Cell Synthesis for the Planar RFET Technology.

Maximilian Reuter, Johannes Pfau, Tillmann A. Krauss, Jürgen Becker, Klaus Hofmann

IEEE Trans. Circuits Syst. I Regul. Pap., 2021

2020

Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications.

Maximilian Reuter, Johannes Pfau, Tillmann A. Krauss, Mahdi Moradinasab, Udo Schwalke, Jürgen Becker, Klaus Hofmann

Proceedings of the 11th IEEE Latin American Symposium on Circuits & Systems, 2020

2019

From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI.

Maximilian Reuter, Tillmann A. Krauss, Mahdi Moradinasab, Johannes Pfau, Udo Schwalke, Jürgen Becker, Klaus Hofmann

Proceedings of the 2019 IEEE Asia Pacific Conference on Circuits and Systems, 2019

2018

Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection.

Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes

Proceedings of the 25th International Conference "Mixed Design of Integrated Circuits and System", 2018

Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.

Tillmann Krauss, Frank Wessely, Udo Schwalke

Proceedings of the 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2018

2017

Simulation framework for barrier lowering in Schottky barrier MOSFETs.

Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes

Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS.

Tillmann Krauss, Frank Wessely, Udo Schwalke

Proceedings of the 12th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2017

2016

Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS.

Tillmann Krauss, Frank Wessely, Udo Schwalke

Proceedings of the 13th International Multi-Conference on Systems, Signals & Devices, 2016

2014

An electrostatically doped planar device concept.

Tillmann Krauss, Frank Wessely, Udo Schwalke

Proceedings of the 9th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2014

2013

Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs.

Frank Wessely, Tillmann Krauss, Udo Schwalke

Microelectron. J., 2013

Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material.

Udo Schwalke, Frank Wessely, Tillmann Krauss

Proceedings of the 8th International Design and Test Symposium, 2013

2012

Dopant-free CMOS: A new device concept.

Frank Wessely, Tillmann Krauss, Udo Schwalke

Proceedings of the 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2012