Tihomir Knezevic

Orcid: 0000-0002-5759-1118

According to our database1, Tihomir Knezevic authored at least 11 papers between 2011 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2021
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer.
Proceedings of the 44th International Convention on Information, 2021

2020
Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode.
Proceedings of the 43rd International Convention on Information, 2020

2019
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

2017
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

2016
Analysis of electrical and optical characteristics of InP/InGaAs avalanche photodiodes in linear regime by a new simulation environment.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016

Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016

2015
Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure.
Proceedings of the 38th International Convention on Information and Communication Technology, 2015

2012
Modelling of electrical characteristics of ultrashallow pure amorphous boron p<sup>+</sup>n junctions.
Proceedings of the 2012 Proceedings of the 35th International Convention, 2012

2011
Optimization of the perimeter doping of ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>+</sup> photodiodes.
Proceedings of the MIPRO, 2011


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