Tien-Yu Lan

According to our database, Tien-Yu Lan authored at least 9 papers between 2020 and 2021.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2021

Improved UHV IGBT-Cell for ESD Protection with High Holding Voltage via a 0.5µm BCD Process.

Yu-Jie Zhou, Shen-Li Chen, Tien-Yu Lan, Shi-Zhe Hong, Zhi-Wei Liu, Zhong-Yi Lai

Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering.

Tien-Yu Lan, Shen-Li Chen, Yu-Jie Zhou, Shi-Zhe Hong, Jhong-Yi Lai, Zhi-Wei Liu

Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations.

Shi-Zhe Hong, Shen-Li Chen, Tien-Yu Lan, Yu-Jie Zhou, Zhi-Wei Liu, Jhong-Yi Lai

Proceedings of the IEEE International Conference on Consumer Electronics-Taiwan, 2021

2020

ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer.

Yu-Jie Zhou, Shen-Li Chen, Pei-Lin Wu, Po-Lin Lin, Sheng-Kai Fan, Tien-Yu Lan, Shi-Zhe Hong

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.

Tien-Yu Lan, Shen-Li Chen, Po-Lin Lin, Sheng-Kai Fan, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices.

Shi-Zhe Hong, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Tien-Yu Lan, Yu-Jie Zhou

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.

Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan, Tien-Yu Lan, Yu-Jie Zhou, Shi-Zhe Hong

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.

Tien-Yu Lan, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability.

Sheng-Kai Fan, Shen-Li Chen, Po-Lin Lin, Shi-Zhe Hong, Tien-Yu Lan, Yu-Jie Zhou

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020