Tibor Grasser
Orcid: 0000-0001-6536-2238
According to our database1,
Tibor Grasser
authored at least 84 papers
between 2003 and 2024.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2016, "For contributions to modeling the reliability of semiconductor devices".
Timeline
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Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
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on zbmath.org
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on orcid.org
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on id.loc.gov
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on d-nb.info
On csauthors.net:
Bibliography
2024
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors.
Proceedings of the Device Research Conference, 2024
2023
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2021
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.
Proceedings of the International Conference on IC Design and Technology, 2021
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 Device Research Conference, 2020
2019
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
2018
Microelectron. Reliab., 2018
Microelectron. Reliab., 2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.
Microelectron. Reliab., 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Reliability of next-generation field-effect transistors with transition metal dichalcogenides.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio.
Proceedings of the 76th Device Research Conference, 2018
2017
Transformation: nanotechnology - challenges in transistor design and future technologies.
Elektrotech. Informationstechnik, 2017
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2016
ACM Trans. Math. Softw., 2016
SIAM J. Sci. Comput., 2016
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2015
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.
Microelectron. Reliab., 2015
Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.
Proceedings of the 45th European Solid State Device Research Conference, 2015
The defect-centric perspective of device and circuit reliability - From individual defects to circuits.
Proceedings of the 45th European Solid State Device Research Conference, 2015
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
IEEE Trans. Very Large Scale Integr. Syst., 2014
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
Proceedings of the International Workshop on OpenCL, 2014
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014
2013
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.
Microelectron. Reliab., 2013
2012
Microelectron. Reliab., 2012
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities.
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.
Proceedings of the IEEE International Conference on IC Design & Technology, 2012
2011
Microelectron. Reliab., 2011
Microelectron. Reliab., 2011
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.
Proceedings of the Facing the Multicore - Challenge II, 2011
2010
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectron. Reliab., 2010
Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors.
J. Comput. Phys., 2010
2009
Microelectron. Reliab., 2009
On the temperature and voltage dependence of short-term negative bias temperature stress.
Microelectron. Reliab., 2009
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
Proceedings of the Large-Scale Scientific Computing, 7th International Conference, 2009
2008
2007
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007
Microelectron. Reliab., 2007
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.
Microelectron. Reliab., 2007
2006
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2006
2005
2004
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination.
Microelectron. Reliab., 2004
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.
Microelectron. J., 2004
2003
A review of hydrodynamic and energy-transport models for semiconductor device simulation.
Proc. IEEE, 2003
Microelectron. Reliab., 2003