Thomas Rueckes

According to our database, Thomas Rueckes authored at least 7 papers between 2010 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed.

Hitoshi Saito, J. Watanabe, J. Seino, T. Tamura, N. Sashida, K. Hara, K. Kawabata, A. Fujii, J. Ohno, A. Nakakubo, M. Kojima, T. Shimoyama, H. Wada, Lee Cleveland, H. Luan, R. Sen, N. Leong, T. Gallagher, Thomas Rueckes

Proceedings of the IEEE International Memory Workshop, 2021

2020

Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2017

NRAM status and prospects.

David C. Gilmer, Thomas Rueckes, Lee Cleveland, Darlene Viviani

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory.

Sheyang Ning, Tomoko Ogura Iwasaki, Shuhei Tanakamaru, Darlene Viviani, Henry Huang, Monte Manning, Thomas Rueckes, Ken Takeuchi

IEEE J. Solid State Circuits, 2016

2010

A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM).

Glen Rosendale, Sohrab Kianian, Monte Manning, Darlene Hamilton, Henry Huang, Karl Robinson, Young Weon Kim, Thomas Rueckes

Proceedings of the 36th European Solid-State Circuits Conference, 2010