Thomas Kauerauf

According to our database, Thomas Kauerauf authored at least 5 papers between 2011 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area.

Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2014

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability.

Baojun Tang, Kris Croes, Yohan Barbarin, Yunqi Wang, Robin Degraeve, Yunlong Li, Maria Toledano-Luque, Thomas Kauerauf, Jürgen Bömmels, Zsolt Tökei, Ingrid De Wolf

Microelectron. Reliab., 2014

2013

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2011

Reliability of thin ZrO₂ gate dielectric layers.

Robert O'Connor, Greg Hughes, Thomas Kauerauf, Lars-Åke Ragnarsson

Microelectron. Reliab., 2011