Thomas Holtij

According to our database, Thomas Holtij authored at least 6 papers between 2013 and 2014.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2014

Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects.

Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez

Microelectron. J., 2014

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current.

Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Microelectron. J., 2014

Improved analytical potential modeling in double-gate tunnel-FETs.

Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems, 2014

3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs.

Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Unified charge model for short-channel junctionless double gate MOSFETs.

Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs.

Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013