Thomas E. Kazior

According to our database, Thomas E. Kazior authored at least 4 papers between 2000 and 2008.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2008

GaN-Based RF Power Devices and Amplifiers.

Umesh K. Mishra, Likun Shen, Thomas E. Kazior, YiFeng Wu

Proc. IEEE, 2008

2002

Trapping effects in GaN and SiC microwave FETs.

Steven C. Binari, P. B. Klein, Thomas E. Kazior

Proc. IEEE, 2002

Reliability of metamorphic HEMTs on GaAs substrates.

Phil F. Marsh, Colin S. Whelan, William E. Hoke, Robert E. Leoni III, Thomas E. Kazior

Microelectron. Reliab., 2002

2000

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates.

Colin S. Whelan, Phil F. Marsh, William E. Hoke, Rebecca A. McTaggart, Peter S. Lyman, Peter J. Lemonias, Steven M. Lardizabal, Robert E. Leoni III, Steven J. Lichwala, Thomas E. Kazior

IEEE J. Solid State Circuits, 2000