Thomas Aichinger
Orcid: 0000-0002-6866-8141
According to our database1,
Thomas Aichinger
authored at least 14 papers
between 2008 and 2024.
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Bibliography
2024
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2018
Microelectron. Reliab., 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2013
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.
Microelectron. Reliab., 2013
Microprocess. Microsystems, 2013
2011
Microelectron. Reliab., 2011
2008