Tetsuya Suemitsu

According to our database, Tetsuya Suemitsu authored at least 12 papers between 2002 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal.

Dai Nakajima, Kazuki Nishimura, Mitsuki Watanabe, Tsung-Tse Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

2015

InP and GaN high electron mobility transistors for millimeter-wave applications.

Tetsuya Suemitsu

IEICE Electron. Express, 2015

Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network.

Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Junichi Kani, Jun Terada, Taiichi Otsuji

Proceedings of the European Conference on Optical Communication, 2015

2013

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique.

Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Proc. IEEE, 2013

Site-Selective Epitaxy of Graphene on Si Wafers.

Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu

Proc. IEEE, 2013

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.

Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu

Proceedings of the European Solid-State Device Research Conference, 2013

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band.

Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto

Proceedings of the European Solid-State Device Research Conference, 2013

2010

Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems.

Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji

IEICE Trans. Electron., 2010

2007

InP HEMT Technology for High-Speed Logic and Communications.

Tetsuya Suemitsu, Masami Tokumitsu

IEICE Trans. Electron., 2007

2006

An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets.

Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki

IEICE Electron. Express, 2006

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

IEICE Electron. Express, 2006

2002

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs.

Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama

Microelectron. Reliab., 2002