Tatsuya Ohguro

According to our database, Tatsuya Ohguro authored at least 11 papers between 1998 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

Evaluation methodology for current collapse phenomenon of GaN HEMTs.

Toru Sugiyama, Kohei Oasa, Yasunobu Saito, Akira Yoshioka, Takuo Kikuchi, Aya Shindome, Tatsuya Ohguro, Takeshi Hamamoto

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits.

Tatsuya Ohguro, Satoshi Inaba, Akio Kaneko, Kimitoshi Okano

IEICE Trans. Electron., 2015

2.2um BSI CMOS image sensor with two layer photo-detector.

Hiroki Sasaki, Ai Mochizuki, Yuki Sugiura, Ryoji Hasumi, Kentaro Eda, Yoshitaka Egawa, Hirofumi Yamashita, Kenji Honda, Tatsuya Ohguro, Hisayo S. Momose, Hiroshi Ootani, Yoshiaki Toyoshima, Tetsuya Asami

Proceedings of the Image Sensors and Imaging Systems 2015, 2015

2009

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors.

Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto

IEICE Trans. Electron., 2009

2008

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.

Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto

Math. Comput. Simul., 2008

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation.

Tamio Ikehashi, Takayuki Miyazaki, Hiroaki Yamazaki, Atsushi Suzuki, Etsuji Ogawa, Shinji Miyano, Tomohiro Saito, Tatsuya Ohguro, Takeshi Miyagi, Yoshiaki Sugizaki, Nobuaki Otsuka, Hideki Shibata, Yoshiaki Toyoshima

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2005

1/<i>f</i>-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation.

Shizunori Matsumoto, Hiroaki Ueno, Satoshi Hosokawa, Toshihiko Kitamura, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama

IEICE Trans. Electron., 2005

MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime.

Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

2003

Scalable Parasitic Components Model of CMOS for RF Circuit Design.

Nobuyuki Itoh, Tatsuya Ohguro, Kazuhiro Katoh, Hideki Kimijima, Shin-ichiro Ishizuka, Kenji Kojima, Hiroyuki Miyakawa

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2003

1999

CMOS/BiCMOS Technology.

Yasuhiro Katsumata, Tatsuya Ohguro, Kazumi Inoh, Eiji Morifuji, Takashi Yoshitomi, Hideki Kimijima, Hideaki Nii, Toyota Morimoto, Hisayo S. Momose, Kuniyoshi Yoshikawa, Hidemi Ishiuchi, Hiroshi Iwai

Proceedings of the VLSI Handbook., 1999

1998

The impact of scaling down to deep submicron on CMOS RF circuits.

Qiuting Huang, Francesco Piazza, Paolo Orsatti, Tatsuya Ohguro

IEEE J. Solid State Circuits, 1998