Taras Ravsher

According to our database, Taras Ravsher authored at least 8 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory.

Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification.

Taras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar

Proceedings of the IEEE International Memory Workshop, 2024

2023

NPN Si/SiGe memory selector with non-linearity>10⁵ and ON-current>6MA/cm².

Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.

Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.

Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Modeling and spectroscopy of ovonic threshold switching defects.

Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability.

Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar

Proceedings of the IEEE International Memory Workshop, 2021

2019

Adoption of 2T2C ferroelectric memory cells for logic operation.

Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck

Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019