Takeshi Ohshima
Orcid: 0000-0002-7850-3164
According to our database1,
Takeshi Ohshima
authored at least 6 papers
between 2014 and 2023.
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Bibliography
2023
Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
2018
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs.
Microelectron. Reliab., 2018
Proceedings of the 76th Device Research Conference, 2018
2014
Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence.
IEICE Trans. Electron., 2014