Takeo Hattori
According to our database1,
Takeo Hattori
authored at least 10 papers
between 2006 and 2012.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2001, "For his contributions to the studies on the formation and the characterization of ultrathin gate oxides for ULSI devices.".
Timeline
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2012
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Book In proceedings Article PhD thesis Dataset OtherLinks
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Bibliography
2012
Oxide and interface trap densities estimation in ultrathin W/La<sub>2</sub>O<sub>3</sub>/Si MOS capacitors.
Microelectron. Reliab., 2012
Resistive switching behavior of a CeO<sub>2</sub> based ReRAM cell incorporated with Si buffer layer.
Microelectron. Reliab., 2012
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
Effects of La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> gated nMOSFETs on low-frequency noise.
Microelectron. Reliab., 2011
2010
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La<sub>2</sub>O<sub>3</sub> gate dielectrics.
Microelectron. Reliab., 2010
Microelectron. Reliab., 2010
2008
Electrical characteristics of MOSFETs with La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> gate stack.
Microelectron. Reliab., 2008
2007
Microelectron. Reliab., 2007
Carrier separation and Vth measurements of W-La<sub>2</sub>O<sub>3</sub> gated MOSFET structures after electrical stress.
IEICE Electron. Express, 2007
2006
Effective mobility and interface-state density of La<sub>2</sub>O<sub>3</sub> nMISFETs after post deposition annealing.
IEICE Electron. Express, 2006