Takashi Nishida

According to our database, Takashi Nishida authored at least 6 papers between 1989 and 2010.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2010

Electrical Properties of Ba_0.5Sr_0.5Ta₂O₆ Thin Film Fabricated by Sol-Gel Method.

Li Lu, Masahiro Echizen, Takashi Nishida, Kiyoshi Uchiyama, Yukiharu Uraoka

IEICE Trans. Electron., 2010

1995

An experimental 220-MHz 1-Gb DRAM with a distributed-column-control architecture.

Takeshi Sakata, Masashi Horiguchi, Tomonori Sekiguchi, Shigeki Ueda, Hitoshi Tanaka, Eiji Yamasaki, Yoshinobu Nakagome, Masakazu Aoki, Toru Kaga, Makoto Ohkura, Ryo Nagai, Fumio Murai, Toshihiko Tanaka, Shimpei Iijima, Natsuki Yokoyama, Yasushi Gotoh, Ken'ichi Shoji, Teruaki Kisu, Hisaomi Yamashita, Takashi Nishida, Eiji Takeda

IEEE J. Solid State Circuits, November, 1995

A 300-MHz 4-Mb wave-pipeline CMOS SRAM using a multiphase PLL.

Koichiro Ishibashi, Kunihiro Komiyaji, Hiroshi Toyoshima, Masataka Minami, Nagatoshi Ohki, Hiroshi Ishida, Toshiaki Yamanaka, Takahiro Nagano, Takashi Nishida

IEEE J. Solid State Circuits, November, 1995

A 6-ns 4-Mb CMOS SRAM with offset-voltage-insensitive current sense amplifiers.

Koichiro Ishibashi, Koichi Takasugi, Kunihiro Komiyaji, Hiroshi Toyoshima, Toshiaki Yamanaka, Akira Fukami, Naotaka Hashimoto, Nagatoshi Ohki, Akihiro Shimizu, Takashi Hashimoto, Takahiro Nagano, Takashi Nishida

IEEE J. Solid State Circuits, April, 1995

1994

Hearing aid evaluation using variable - speech - rate audiometry.

Hiroshi Hosoi, Yoshiaki Tsuta, Takashi Nishida, Kiyotaka Murata, Fumihiko Ohta, Tsuyoshi Mekata, Yumiko Kato

Proceedings of the 3rd International Conference on Spoken Language Processing, 1994

1989

A 9-ns 1-Mbit CMOS SRAM.

Katsuro Sasaki, Koichiro Ishibashi, Toshiaki Yamanaka, Naotaka Hashimoto, Takashi Nishida, Katsuhiro Shimohigashi, Shoji Hanamura, Shigeru Honjo

IEEE J. Solid State Circuits, October, 1989