Takashi Kono
According to our database1,
Takashi Kono
authored at least 23 papers
between 2000 and 2024.
Collaborative distances:
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Bibliography
2024
A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C.
IEEE J. Solid State Circuits, April, 2024
15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
An On-Chip DC-DC Converter and Power Management System Achieving Zero Standby-to-Active Transition Time in MCU.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
2022
A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm<sup>2</sup> Density With Charge-Assisted Offset Cancellation Sense Amplifier.
IEEE J. Solid State Circuits, 2022
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2021
A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021
2020
Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age.
IEICE Trans. Electron., 2020
2019
A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
A 24MB Embedded Flash System Based on 28nm SG-MONOS Featuring 240MHz Read Operations and Robust Over-The-Air Software Update for Automotive.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
2018
Proceedings of the Embedded Flash Memory for Embedded Systems: Technology, 2018
Introduction to the January Special Issue on the 2017 IEEE International Solid-State Circuits Conference.
IEEE J. Solid State Circuits, 2018
2017
Proceedings of the 2017 International Symposium on VLSI Design, Automation and Test, 2017
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2016
A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170°C.
IEEE J. Solid State Circuits, 2016
7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
2015
7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
40-nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macros for Automotive With 160-MHz Random Access for Code and Endurance Over 10 M Cycles for Data at the Junction Temperature of 170°C.
IEEE J. Solid State Circuits, 2014
2013
40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2005
Highly Flexible Row and Column Redundancy and Cycle Time Adaptive Read Data Path for Double Data Rate Synchronous Memories.
IEICE Trans. Electron., 2005
2004
IEEE J. Solid State Circuits, 2004
2000
IEEE J. Solid State Circuits, 2000
A precharged-capacitor-assisted sensing (PCAS) scheme with novel level controllers for low-power DRAMs.
IEEE J. Solid State Circuits, 2000