Takashi Kobayashi

Affiliations:
  • Hitachi Ltd., Central Research Laboratory, Tokyo, Japan (since 1986)


According to our database1, Takashi Kobayashi authored at least 8 papers between 1991 and 2007.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2007
Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories.
IEICE Trans. Electron., 2007

A 126 mm<sup>2</sup> 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology.
IEICE Trans. Electron., 2007

2006
A 130-nm CMOS 95-mm<sup>2</sup> 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput.
IEICE Trans. Electron., 2006

2005
Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories.
IEEE J. Solid State Circuits, 2005

1999
Single-electron memory for giga-to-tera bit storage.
Proc. IEEE, 1999

1998
Internal voltage generator for low voltage, quarter-micrometer flash memories.
IEEE J. Solid State Circuits, 1998

1996
Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories.
IEEE J. Solid State Circuits, 1996

1991
Performance Model of Interference Avoidance Policy Using Stochastic Petri Nets.
Proceedings of the Fourth International Workshop on Petri Nets and Performance Models, 1991


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