Takamasa Kawanago

According to our database, Takamasa Kawanago authored at least 8 papers between 2010 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET.

Takamasa Kawanago, Tomoaki Oba, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs.

Takamasa Kawanago, Ryo Ikoma, Tomoaki Oba, Hiroyuki Takagi

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

La₂O₃ gate dielectrics for AlGaN/GaN HEMT.

J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima

Microelectron. Reliab., 2016

Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics.

Takamasa Kawanago, Ryo Ikoma, Du Wanjing, Shunri Oda

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2013

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.

Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.

Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai

Microelectron. Reliab., 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

SrO capping effect for La₂O₃/Ce-silicate gate dielectrics.

Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2010