Takahiro Iizuka

According to our database, Takahiro Iizuka authored at least 16 papers between 2005 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits.

Subhajit Das, Takahiro Iizuka

Proceedings of the International Symposium on Devices, Circuits and Systems, 2023

2021

Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation.

Abhishek Kar, Mitiko Miura-Mattausch, Mainak Sengupta, Dondee Navarro, Hideyuki Kikuchihara, Takahiro Iizuka, Hafizur Rahaman, Hans Jürgen Mattausch

IEEE Access, 2021

History effect investigation in SOI MOSFET for minimizing impact on circuit performance.

Soumajit Ghosh, Takahiro Iizuka

Proceedings of the 4th International Symposium on Devices, Circuits and Systems, 2021

2020

Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs.

Takahiro Iizuka

Proceedings of the 3rd International Symposium on Devices, Circuits and Systems, 2020

Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation.

Fernando Ávila Herrera, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Yoko Hirano, Hans Jürgen Mattausch

Proceedings of the 3rd International Symposium on Devices, Circuits and Systems, 2020

History Effect on Circuit Performance of SOI-MOSFETs.

Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Hafizur Rahaman, Hans Jürgen Mattausch

Proceedings of the 3rd International Symposium on Devices, Circuits and Systems, 2020

2019

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs.

Arnab Mukhopadhyay, Tapas Kumar Maiti, Sandip Bhattacharya, Takahiro Iizuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hafizur Rahaman, Sadayuki Yoshitomi, Dondee Navarro, Hans Jürgen Mattausch

IEICE Trans. Electron., 2019

Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs.

Takahiro Iizuka, Hiroyuki Hashigami, Mitiko Miura-Mattausch, Hans Jürgen Mattausch

Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

2018

Compact Modeling for Power Efficient Circuit Design.

Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tahahiro Kajiwara, Yuta Tanimoto, Atsushi Saito, Takahiro Iizuka, Dondee Navarro, Hans Jürgen Mattausch

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2013

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.

Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch

IEICE Trans. Electron., 2013

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation.

Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch

IEICE Trans. Electron., 2013

2012

Compact Modeling of Expansion Effects in LDMOS.

Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch

IEICE Trans. Electron., 2012

2009

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors.

Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto

IEICE Trans. Electron., 2009

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation.

Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada

IEICE Trans. Electron., 2009

2008

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations.

Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto

Math. Comput. Simul., 2008

2005

MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime.

Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005