Takahiro Gotow

According to our database, Takahiro Gotow authored at least 3 papers between 2017 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2020

Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer.

Yasuyuki Miyamoto, Takahiro Gotow

IEICE Trans. Electron., 2020

2018

MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI.

Shinichi Takagi, Kimihiko Kato, Wu-Kang Kim, Kwangwon Jo, Ryo Matsumura, Ryotaro Takaguchi, Dae-Hwan Ahn, Takahiro Gotow, Mitsuru Takenaka

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

III-V-based low power CMOS devices on Si platform.

Shinichi Takagi, D. H. Ahn, Takahiro Gotow, M. Noguchi, K. Nishi, S.-H. Kim, M. Yokoyama, C.-Y. Chang, S.-H. Yoon, C. Yokoyama, Mitsuru Takenaka

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017