Taiichi Otsuji

Orcid: 0000-0002-0887-0479

According to our database1, Taiichi Otsuji authored at least 30 papers between 1988 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2014, "For contributions to plasmonic semiconductor integrated device technology for terahertz sensing".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2024
Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection.
Proceedings of the Device Research Conference, 2024

2023
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

2021
Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications.
Sensors, 2021

Concept of Resilient Electric Power and Information Communication Technology (R-EICT) Converged Network Systems Based on Overall Optimization of Autonomous Decentralized Cooperative Control of DC Microgrids.
Proceedings of the IEEE Power & Energy Society Innovative Smart Grid Technologies Conference, 2021

Fast terahertz detection by asymmetric dual-grating-gate graphene FET.
Proceedings of the Device Research Conference, 2021

2019
UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2019

2018
Graphene-Channel-Transistor Terahertz Amplifier.
Proceedings of the 76th Device Research Conference, 2018

2015
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network.
Proceedings of the European Conference on Optical Communication, 2015

2013
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique.
Proc. IEEE, 2013

Site-Selective Epitaxy of Graphene on Si Wafers.
Proc. IEEE, 2013

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.
Proceedings of the European Solid-State Device Research Conference, 2013

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band.
Proceedings of the European Solid-State Device Research Conference, 2013

2010
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems.
IEICE Trans. Electron., 2010

2009
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter.
IEICE Trans. Electron., 2009

2007
Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer.
IEICE Trans. Electron., 2007

2006
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer.
IEICE Trans. Electron., 2006

Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer.
IEICE Trans. Electron., 2006

2001
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode.
IEEE J. Solid State Circuits, 2001

2000
A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure.
IEEE J. Solid State Circuits, 2000

1999
40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs.
IEEE J. Solid State Circuits, 1999

Circuit design technologies for high-speed lightwave communications beyond 40 Gbit/s.
Proceedings of the 1999 International Symposium on Circuits and Systems, ISCAS 1999, Orlando, Florida, USA, May 30, 1999

1998
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs.
IEEE J. Solid State Circuits, 1998

A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's.
IEEE J. Solid State Circuits, 1998

High-speed GaAs MESFET Digital IC Design for Optical Communication Systems.
Proceedings of the ASP-DAC '98, 1998

1997
A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs.
IEEE J. Solid State Circuits, 1997

40-Gb/s ICs for future lightwave communications systems.
IEEE J. Solid State Circuits, 1997

1995
A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-μm GaAs MESFET.
IEEE J. Solid State Circuits, October, 1995

1991
A Picosecond Accuracy Timing Error Compensation Technique in TDR Measurement.
Proceedings of the Proceedings IEEE International Test Conference 1991, 1991

1989
A 10-ps resolution, process-insensitive timing generator IC.
IEEE J. Solid State Circuits, October, 1989

1988
Key Technologies for 500 MHz VLSI Test System "ULTIMATE".
Proceedings of the Proceedings International Test Conference 1988, 1988


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