T. V. Torchynska

According to our database, T. V. Torchynska authored at least 6 papers between 2003 and 2008.

Collaborative distances:

• Dijkstra number of seven.
• Erdős number of seven.

2008

Porous SiC layers on Si nanowire surface.

A. I. Diaz Cano, T. V. Torchynska, J. E. Urbina-Alvarez, Gabriel Romero-Paredes Rubio, Sergio Jiménez-Sandoval, Y. V. Vorobiev

Microelectron. J., 2008

2005

Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power.

T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, Ramon Peña-Sierra, Eu. Shcherbina

Microelectron. J., 2005

Photoluminescence and Raman spectroscopy in porous SiC.

T. V. Torchynska, A. I. Diaz Cano, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, Marina Mynbaeva

Microelectron. J., 2005

Optical investigation of Si nano-crystals in amorphous silicon matrix.

A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina

Microelectron. J., 2005

Optical properties of porous silicon surface.

E. Chambon, E. Florentin, T. V. Torchynska, J. González-Hernández, Y. V. Vorobiev

Microelectron. J., 2005

2003

Formation of Si/SiO_x interface and its influence on photoluminescence of Si nano-crystallites.

F. G. Becerril-Espinoza, T. V. Torchynska, M. Morales Rodríguez, Larysa Khomenkova, L. V. Shcherbina

Microelectron. J., 2003