T. T. Sheng

According to our database, T. T. Sheng authored at least 1 paper in 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2007

Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si.

W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng

Microelectron. Reliab., 2007