T. Pompl

According to our database, T. Pompl authored at least 3 papers between 2001 and 2006.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2006

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides.

T. Pompl, A. Kerber, M. Röhner, Martin Kerber

Microelectron. Reliab., 2006

2001

Soft breakdown and hard breakdown in ultra-thin oxides.

T. Pompl, C. Engel, H. Wurzer, Martin Kerber

Microelectron. Reliab., 2001

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices.

G. Innertsberger, T. Pompl, Martin Kerber

Microelectron. Reliab., 2001