T. Hackbarth

According to our database, T. Hackbarth authored at least 1 paper in 2004.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2004

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs.

L. Yang, Asen Asenov, Jeremy R. Watling, M. Boriçi, John R. Barker, Scott Roy, K. Elgaid, Iain Thayne, T. Hackbarth

Microelectron. Reliab., 2004